Temperature effects on the Drain Current in GaN Dual-Gate MESFET using Two-Dimensional Device Simulation
Temperature dependence of the GaN-Dual-Gate MESFET (GaN-DGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO are presented for a GaN-DGMESFET with a gate length of 0.5 m. The results show a significant degradation of the DC characteristics. Variation of the electron temperature with the drain-source voltage (Vds) is studied and a large temperature is observed for Vds 1 V. At low drain-source voltage (Vds 1 V) the electron temperature is closed to the lattice temperature.
Keywords: DGMESFET, GaN, Temperature, Steady-state.
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ABOUT THE AUTHORS
Hamida Djelti
Laboratoire des Systèmes et Technologies de l\'Information et de la Communication (STIC) Département de Génie Electrique, Faculté de Technologie, Université Abou Bekr Belkaid de Tlemcen. BP 230, Chetouane,13000 Tlemcen - Algérie
Mohammed Feham
Laboratoire des Systèmes et Technologies de l\'Information et de la Communication (STIC), Département de Génie Electrique, Faculté de Technologie, Université Abou Bekr Belkaid de Tlemcen. BP 230, Chetouane,13000 Tlemcen - Algérie
Achour Ouslimani
ENSEA, Electronique et Commande de Systèmes ECS-Lab EA3649, 6 avenue du Ponceau, 95014 Cergy Cedex, France
Abed-Elhak Kasbari
ENSEA, Electronique et Commande de Systèmes ECS-Lab EA3649, 6 avenue du Ponceau, 95014 Cergy Cedex, France
Hamida Djelti
Laboratoire des Systèmes et Technologies de l\'Information et de la Communication (STIC) Département de Génie Electrique, Faculté de Technologie, Université Abou Bekr Belkaid de Tlemcen. BP 230, Chetouane,13000 Tlemcen - Algérie
Mohammed Feham
Laboratoire des Systèmes et Technologies de l\'Information et de la Communication (STIC), Département de Génie Electrique, Faculté de Technologie, Université Abou Bekr Belkaid de Tlemcen. BP 230, Chetouane,13000 Tlemcen - Algérie
Achour Ouslimani
ENSEA, Electronique et Commande de Systèmes ECS-Lab EA3649, 6 avenue du Ponceau, 95014 Cergy Cedex, France
Abed-Elhak Kasbari
ENSEA, Electronique et Commande de Systèmes ECS-Lab EA3649, 6 avenue du Ponceau, 95014 Cergy Cedex, France
