Capacitance-Voltage Analysis for Al2O3 based High-K Dielectric Based MOS Devices
In this paper we have calculated Capacitance-Voltage (C-V) relationship for Metal-Oxide-Semiconductor (MOS) Devices and plotted it for high-k dielectric material Aluminum Oxide (Al2O3) as oxide material, Si as substrate and compared it with the conventional SiO2 based MOS devices. We have made the simplest possible model for the MOS device and based on it results have been derived. The C-V characteristics are also obtained from ATLAS simulator for the MOS. Excellent agreement has been observed for theoretical and simulation results for high frequency as well as low frequency C-V curve.
Keywords: C-V characteristics, High-k, Al2O3, MOS
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ABOUT THE AUTHORS
Niladri Pratap Maity
Department of Electronics & Communication Engineering, Mizoram University (A Central University), Aizawl-796004, India
A. K. Pandeya
Final Year student of the Department of Electronics & Communication Engineering, Mizoram University (a Central University, Govt. of India)
Reshmi Maity
Department of Electronics & Communication Engineering, Mizoram University (A Central University), Aizawl-796004, India
Niladri Pratap Maity
Department of Electronics & Communication Engineering, Mizoram University (A Central University), Aizawl-796004, India
A. K. Pandeya
Final Year student of the Department of Electronics & Communication Engineering, Mizoram University (a Central University, Govt. of India)
Reshmi Maity
Department of Electronics & Communication Engineering, Mizoram University (A Central University), Aizawl-796004, India
